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Transistor 2N5551

Transistor 2N5551

Transistor 2N5551

Product Code :Transistor 2N5551
Availability :50
  • 100 FCFA

This product has a minimum quantity of 5
Product Details

Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Specifications

Attribute Value
Transistor Type NPN
Maximum DC Collector Current 600 mA
Maximum Collector Emitter Voltage 160 V
Package Type TO-92
Mounting Type Through Hole
Maximum Power Dissipation 625 mW
Minimum DC Current Gain 80
Transistor Configuration Single
Maximum Collector Base Voltage 180 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 100 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Collector Emitter Saturation Voltage 0.20 V
Dimensions 5.2 x 4.19 x 5.33mm
Maximum Base Emitter Saturation Voltage 1 V
Minimum Operating Temperature -50 °C
Length 5.2mm
Height 5.33mm
Maximum Operating Temperature +150 °C
Width 4.19mm

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