Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Specifications
| Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 500 mA |
| Maximum Collector Emitter Voltage | 300 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 625 mW |
| Minimum DC Current Gain | 25 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 300 V |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 50 MHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Width | 4.19mm |
| Height | 5.33mm |
| Minimum Operating Temperature | -55 °C |
| Dimensions | 5.2 x 4.19 x 5.33mm |
| Length | 5.2mm |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Emitter Saturation Voltage | 0.5 V |
